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1 August 1990 Modulation spectroscopy of semiconductor materials, interfaces, and microstructures: an overview
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Proceedings Volume 1286, Modulation Spectroscopy; (1990)
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Modulation techniques such as electroreflectance, photoreflectance and piezomodulation have become popular room temperature probes of the optical and electronic properties of two dimensional systems such as quantum wells and superlattices. Because of their derivative nature, they allow us to obtain sharp optical features related to interband transitions in the material under study. From this one can obtam transition energies of the microstructure of interest, from which quantum well widths, barrier heights and thicknesses (superlattice case) can be determined. As a direct consequence of the derivative nature of modulation spectroscopy (MS), information can be obtained about the response of the sample to the applied perturbation (used for the modulation), i.e. the electric field or optically induced free carriers. In this paper, we will review the application of MS to the study of optical and electronic properties of microstructures. We will consider not only the experimental implementation of the various techniques, but also discuss the nature of the electromodulation line shapes. From this it will be seen how these techniques can be applied to device structures. Examples from recent work will be presented.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Orest J. Glembocki "Modulation spectroscopy of semiconductor materials, interfaces, and microstructures: an overview", Proc. SPIE 1286, Modulation Spectroscopy, (1 August 1990);

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