Photoreflectance measurements of indium content in semi-insulating indium-alloyed GaAs bulk substrates

S. Ravipati; P. W. Yu; B. E. Taylor; W. C. Mitchel

doi:10.1117/12.20838

1 August 1990 Photoreflectance measurements of indium content in semi-insulating indium-alloyed GaAs bulk substrates

S. Ravipati, P. W. Yu, B. E. Taylor, W. C. Mitchel

Proceedings Volume 1286, Modulation Spectroscopy; (1990) https://doi.org/10.1117/12.20838
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States

Abstract

We report the use of rooni-Lemperature photorefleetance measuremenLs to deLenitine radial arid axial nonuniformity of low levels of indium in 3-inch diameter semi-insulaLing GaAs bulk materials grown by the liquid-encapsulaLed Cochralski method. These resulLs were compared with umc. Types of inhomogeneities are discussed in Lerms of indium segregation and the shape of the solid and liquid interface during crystal growth.

Citation Download Citation

S. Ravipati, P. W. Yu, B. E. Taylor, and W. C. Mitchel "Photoreflectance measurements of indium content in semi-insulating indium-alloyed GaAs bulk substrates", Proc. SPIE 1286, Modulation Spectroscopy, (1 August 1990); https://doi.org/10.1117/12.20838

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