High-speed resonant-tunneling diodes made from the In0.53Ga0.47As/AlAs material system

Elliott R. Brown; C. D. Parker; Arthur R. Calawa; M. J. Manfra; T. C. L. Gerh Sollner; Chang Lee Chen; Stella W. Pang; K. M. Molvar

doi:10.1117/12.20913

1 August 1990 High-speed resonant-tunneling diodes made from the In0.53Ga0.47As/AlAs material system

Elliott R. Brown, C. D. Parker, Arthur R. Calawa, M. J. Manfra, T. C. L. Gerh Sollner, Chang Lee Chen, Stella W. Pang, K. M. Molvar

Author Affiliations +

Proceedings Volume 1288, High-Speed Electronics and Device Scaling; (1990) https://doi.org/10.1117/12.20913
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States

Abstract

New double-barrier resonant-tunneling diodes have been fabricated in the pseudomorphic In0.53Ga0.47As/AlAs material system that have peak current densities exceeding 1x105 A cm-2 and peak-to-valley current ratios of approximately 10 at room temperature. One of these diodes yielded oscillations up to 125 GHz, but did not oscillate at higher frequencies because of a large device capacitance. A device with a much lower capacitance is estimated to have a maximum oscillation frequency of 932 GHz and a voltage rise time of 1.5 ps in switching from the peak bias point to the valley bias point. Other reported In0.53Ga0.47As/AlAs diodes are analyzed and yield theoretical maximum oscillation frequencies over 1 THz and rise times as low as 0.3 ps.

Citation Download Citation

Elliott R. Brown, C. D. Parker, Arthur R. Calawa, M. J. Manfra, T. C. L. Gerh Sollner, Chang Lee Chen, Stella W. Pang, and K. M. Molvar "High-speed resonant-tunneling diodes made from the In0.53Ga0.47As/AlAs material system", Proc. SPIE 1288, High-Speed Electronics and Device Scaling, (1 August 1990); https://doi.org/10.1117/12.20913

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