Microwave power and efficiency performance of AlGaAs/GaAs self-aligned HBTs

Nan Lei Wang; Neng Haung Sheng; M. F. Chang; William W. Ho; J. Aiden Higgins; Peter M. Asbeck; Gerard J. Sullivan

doi:10.1117/12.20912

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1 August 1990 Microwave power and efficiency performance of AlGaAs/GaAs self-aligned HBTs

Nan Lei Wang, Neng Haung Sheng, M. F. Chang, William W. Ho, J. Aiden Higgins, Peter M. Asbeck, Gerard J. Sullivan

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Proceedings Volume 1288, High-Speed Electronics and Device Scaling; (1990) https://doi.org/10.1117/12.20912
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States

Abstract

The microwave power performance of AlGaAs/GaAs self-aligned HBTs from 10 to 35 GHz is described. A record value of 68% power added efficiency was obtained at 10 GHz. At 18 GHz, 16.3 dB associated gain was achieved with 1.83 W/mm power density and 40% efficiency. At 35 GHz, a 15 dB small signal gain was observed. The tested HBTs have 2 micron feature size. Further improvement is expected with optimization of the HBT structure.

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Nan Lei Wang, Neng Haung Sheng, M. F. Chang, William W. Ho, J. Aiden Higgins, Peter M. Asbeck, and Gerard J. Sullivan "Microwave power and efficiency performance of AlGaAs/GaAs self-aligned HBTs", Proc. SPIE 1288, High-Speed Electronics and Device Scaling, (1 August 1990); https://doi.org/10.1117/12.20912

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