Realistic band structure models for GaAs/AlAs quantum well diodes

Douglas R. Miller; Vijay K. Reddy; Robert L. Rogers; Dean P. Neikirk

doi:10.1117/12.20917

1 August 1990 Realistic band structure models for GaAs/AlAs quantum well diodes

Douglas R. Miller, Vijay K. Reddy, Robert L. Rogers, Dean P. Neikirk

Proceedings Volume 1288, High-Speed Electronics and Device Scaling; (1990) https://doi.org/10.1117/12.20917
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States

Abstract

Three models are presented for resonant tunneling diodes (RTD). These models range in complexity from a full quantum kinetic equation based on the Crystal Wigner function approach to a simple phenomenological model based on the drift-diffusion equation. Of these three, the Crystal Wigner function has the capability of properly accounting for complex band structure transport issues within the quantum well region.

Citation Download Citation

Douglas R. Miller, Vijay K. Reddy, Robert L. Rogers, and Dean P. Neikirk "Realistic band structure models for GaAs/AlAs quantum well diodes", Proc. SPIE 1288, High-Speed Electronics and Device Scaling, (1 August 1990); https://doi.org/10.1117/12.20917

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