Paper
1 August 1990 Very low-noise Al0.3Ga0.7As/In0.35Ga0.65As/GaAs single quantum-well pseudomorphic HEMTs
P. C. Chao, Pin Ho, K. H.G. Duh, P. M. Smith, J. M. Ballingall, Amani A. Jabra, N. Lewis, E. L. Hall
Author Affiliations +
Proceedings Volume 1288, High-Speed Electronics and Device Scaling; (1990) https://doi.org/10.1117/12.20923
Event: Advances in Semiconductors and Superconductors: Physics Toward Devices Applications, 1990, San Diego, CA, United States
Abstract
AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with an InAs mole fraction as high as 35% in the channel has been successfully fabricated. The device exhibits a maximum extrinsic transconductance of 700mS/mm. At 18GHz, a minimum noise figure of 0.55dB with 15.0dB associated gain was measured. At 94GHz, a minimum noise figure as low as 2.4dB with 5.4dB associated gain was also obtained. This is the best noise performance ever reported for GaAs-based HEMTs.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. C. Chao, Pin Ho, K. H.G. Duh, P. M. Smith, J. M. Ballingall, Amani A. Jabra, N. Lewis, and E. L. Hall "Very low-noise Al0.3Ga0.7As/In0.35Ga0.65As/GaAs single quantum-well pseudomorphic HEMTs", Proc. SPIE 1288, High-Speed Electronics and Device Scaling, (1 August 1990); https://doi.org/10.1117/12.20923
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Cited by 4 scholarly publications.
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KEYWORDS
Field effect transistors

Indium arsenide

Indium gallium arsenide

Resistance

Gallium arsenide

High speed electronics

Measurement devices

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