Paper
1 October 1990 Patterning of high Tc superconducting thin films on Si substrates
Qiyuan Y. Ma, Chester Shu, Edward S. Yang, Chin-An Chang, C. E. Farrell
Author Affiliations +
Abstract
Interdiffusion and reaction at the interface between an YBaCuO film and a Si substrate degrade the superconductivity of the film. Using a buffer layer, the film-substrate interaction can be reduced. Thus, a superconducting thin film is formed on a silicon substrate. A new method of patterning superconducting thin films based on the Si-YBaCuO intermixing has been developed. On a silicon substrate, a thin layer of noble metal was first evaporated and patterned using photolithography. An YBaCuO film was then deposited by e-beam evaporation and annealed in a rapid thermal processing system. After a high temperature annealing, the patterned feature became superconducting separated by Si-YBaCuO intermixed areas. Superconducting micron-sized the structures with Tc of 73 K have been demonstrated. This patterning technique may be useful for making high-Tc superconducting interconnects and devices on a Si wafer.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Qiyuan Y. Ma, Chester Shu, Edward S. Yang, Chin-An Chang, and C. E. Farrell "Patterning of high Tc superconducting thin films on Si substrates", Proc. SPIE 1292, Superconductivity Applications for Infrared and Microwave Devices, (1 October 1990); https://doi.org/10.1117/12.21027
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Cited by 1 scholarly publication.
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KEYWORDS
Silicon

Silicon films

Superconductors

Gold

Optical lithography

Thin films

Superconductivity

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