Chemically amplified resists (CARs) have been widely used for lithography of semiconductors. To suppress stochastic defects, the increase in the number of absorbed photons is essential and the increase in acid generator concentration is needed to capture all the generated electrons. Therefore, the effect of the acid generators on the dissolution of the resist increased. In this study, radiation-induced decomposition of acid generator and dissolution of poly(4-vinylphenol) (PHS) containing 30 wt% of acid generators was investigated using pulse radiolysis, γ radiolysis, quartz crystal microbalance (QCM) methods. TPS-TF was used as the reference structure, and three acid generators with different anionic and cationic structures were prepared, respectively. The structure of the cation was found to affect the decomposition product ratio of the final product. Both cation and anion structures were found to affect the dissolution behavior of the PHS films.
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