Annealing characteristics of Hg1-xCdxTe grown by organometallic vapor phase epitaxy

Krishna K. Parat; Nikhil R. Taskar; Ishwara B. Bhat; Sorab K. Ghandhi

doi:10.1117/12.21704

1 October 1990 Annealing characteristics of Hg1-xCdxTe grown by organometallic vapor phase epitaxy

Krishna K. Parat, Nikhil R. Taskar, Ishwara B. Bhat, Sorab K. Ghandhi

Proceedings Volume 1307, Electro-Optical Materials for Switches, Coatings, Sensor Optics, and Detectors; (1990) https://doi.org/10.1117/12.21704
Event: 1990 Technical Symposium on Optics, Electro-Optics, and Sensors, 1990, Orlando, FL, United States

Abstract

The annealing behavior of Hg1CdTe layers, grown by the conventional Organometallic Vapor Phase Epitaxy (OMVPE) , is reported. As grown layers, which are p-type with a concentration around 4 x 10'6/cm3 of mercury vacancies, become light p-type with carrier concentrations around 1-2x 10'5/cm3 after Hg saturated annealings at temperatures in the range of 200-230°C. These conditions, usually sufficient for the complete annealing of bulk Hg1_CdTe, to n-type, are thus inadequate for OMVPE grown epilayers. The as grown layers are converted to n-type with a carrier concentration of approximately 5 x 10'4/cm3 by a higher temperature anneal at 290°C, followed by a low temperature anneal at 220°C. Hall effect measurements were made under variable temperature as well as variable magnetic field conditions. Bulk carrier concentrations and mobilities were evaluated by considering the effect of the surface inversion/accumulation layer on the Hall data. It is proposed that ptype conduction in the partially annealed layers is due to the persistence of vacancies in the Hg1_CdTe layer, which are not completely annihilated during the low temperature anneal. Conversion to n-type is probably due to residual donor impurities in the as grown Hg1_CdTe layer.

Citation Download Citation

Krishna K. Parat, Nikhil R. Taskar, Ishwara B. Bhat, and Sorab K. Ghandhi "Annealing characteristics of Hg1-xCdxTe grown by organometallic vapor phase epitaxy", Proc. SPIE 1307, Electro-Optical Materials for Switches, Coatings, Sensor Optics, and Detectors, (1 October 1990); https://doi.org/10.1117/12.21704

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
9 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Annealing

Mercury

Electrons

Electro optical sensors

Sensors

Temperature metrology

Tellurium

Show All Keywords

Keywords/Phrases

Search In:

Publication Years