GaAs CCD readout for engineered bandgap detectors

John Song; David Vance Rossi; Eric R. Fossum

doi:10.1117/12.21751

1 September 1990 GaAs CCD readout for engineered bandgap detectors

John Song, David Vance Rossi, Eric R. Fossum

Proceedings Volume 1308, Infrared Detectors and Focal Plane Arrays; (1990) https://doi.org/10.1117/12.21751
Event: 1990 Technical Symposium on Optics, Electro-Optics, and Sensors, 1990, Orlando, FL, United States

Abstract

GaAs and related heterostructure charge-coupled devices (CCDs) for detector array readout multiplexer applications are described. Features of resistive-gate CCDs are compared with capacitive-gate CCDs for this application. Design examples of GaAs CCD readouts for linear and two-dimensional detector arrays with different detection methods and signal coupling schemes are described. Recent progress in two-dimensional electron gas (2DEG) Al(0.3)Ga(0.7)As/GaAs resistive-gate CCDs is also presented. The 2DEG resistive-gate CCD conventional buried-channel GaAs CCD.

Citation Download Citation

John Song, David Vance Rossi, and Eric R. Fossum "GaAs CCD readout for engineered bandgap detectors", Proc. SPIE 1308, Infrared Detectors and Focal Plane Arrays, (1 September 1990); https://doi.org/10.1117/12.21751

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