Effects of thermal annealing on vanadium oxide thin film properties

Alia Naciri; Gavin Farmer; Chris Littler; A.J. Syllaios; Usha Philipose

doi:10.1117/12.3028275

3 October 2024 Effects of thermal annealing on vanadium oxide thin film properties

Alia Naciri, Gavin Farmer, Chris Littler, A.J. Syllaios, Usha Philipose

Author Affiliations +

Proceedings Volume 13145, Infrared Sensors, Devices, and Applications XIV; 1314504 (2024) https://doi.org/10.1117/12.3028275
Event: Optical Engineering + Applications, 2024, San Diego, California, United States

Abstract

We report on the effects of thermal annealing on the structural and electrical properties of Vanadium Oxide (V O_X) thin films. The annealing temperature and duration as well as the annealing environment were varied to study the effect of such variations on the V O_X film resistivity, temperature coefficient of resistance (TCR), and electrical low frequency noise (1/f). The experiments were performed with the device under different experimental conditions that include vacuum, oxygen and an inert gas (argon) environment. The device performance was studied for three annealing different temperatures: 100°C, 200°C and 250°C, with annealing times varying from 15 min to 30 min. The results show a consistent increase in resistance, with larger changes following higher temperature anneals. The influence on TCR and noise was more significant for devices annealed at 200°C or above in vacuum or in argon. X-ray diffraction studies (XRD) show that high annealing temperatures mark the onset of micro-crystallinity, with various stable and metastable phases appearing in the amorphous V O_X film matrix.

Conference Presentation

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Alia Naciri, Gavin Farmer, Chris Littler, A.J. Syllaios, and Usha Philipose "Effects of thermal annealing on vanadium oxide thin film properties", Proc. SPIE 13145, Infrared Sensors, Devices, and Applications XIV, 1314504 (3 October 2024); https://doi.org/10.1117/12.3028275

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

;

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE