High NA EUV stitching: mask performance is a key

Natalia Davydova; Vincent Wiaux; Nick Pellens; Tatiana Kovalevich; Laura Huddleston; Frank Timmermans; Cyrus Tabery; Joost Bekaert; Lieve van Look; Alberto Colina; Bram Slachter; Nitesh Pandey; Stefan Hunsche; Ataklti Weldeslassie; Guillaume Libeert

doi:10.1117/12.3034393

26 August 2024 High NA EUV stitching: mask performance is a key

Natalia Davydova, Vincent Wiaux, Nick Pellens, Tatiana Kovalevich, Laura Huddleston, Frank Timmermans, Cyrus Tabery, Joost Bekaert, Lieve van Look, Alberto Colina, Bram Slachter, Nitesh Pandey, Stefan Hunsche, Ataklti Weldeslassie, Guillaume Libeert

Author Affiliations +

Proceedings Volume 13177, Photomask Japan 2024: XXX Symposium on Photomask and Next-Generation Lithography Mask Technology; 131770F (2024) https://doi.org/10.1117/12.3034393
Event: Photomask Japan 2024, 2024, Yokohama, Japan

Abstract

High NA EUV lithography has become a reality. The high NA EUV scanner (EXE:5000) produces exposure fields of 26x16.5 mm² which is twice smaller than standard fields on other scanners. For certain use cases (e.g. when a die is larger than the High NA field) stitching between two exposure fields might be required. Stitching of vertical lines across two exposure fields has already been demonstrated in several publications. In this publication, we pay attention to photomask related aspects of stitching which are multifold. We draw attention to the need for mask resolution enhancement which will enable advanced OPC at stitching. We will show stitching behavior on both Tantalum and low-n masks and demonstrate low-n absorber reflectivity suppression by means of sub-resolution gratings which is required for stitching. We explore the behavior of the exposure field black border (BB) edge and formulate recommendations for specifications on BB edge control as well as pattern placement and pattern fidelity at the black border. Finally, we conclude that the mask performance is a key enabler of High NA stitching.

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Natalia Davydova, Vincent Wiaux, Nick Pellens, Tatiana Kovalevich, Laura Huddleston, Frank Timmermans, Cyrus Tabery, Joost Bekaert, Lieve van Look, Alberto Colina, Bram Slachter, Nitesh Pandey, Stefan Hunsche, Ataklti Weldeslassie, and Guillaume Libeert "High NA EUV stitching: mask performance is a key", Proc. SPIE 13177, Photomask Japan 2024: XXX Symposium on Photomask and Next-Generation Lithography Mask Technology, 131770F (26 August 2024); https://doi.org/10.1117/12.3034393

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KEYWORDS

Reflectivity

Optical proximity correction

Critical dimension metrology

Reflection

Light sources and illumination

Semiconducting wafers

Tantalum

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