Exploring high-NA EUV mask specification for logic metal

Kenichi Miyaguchi; Soobin Hwang; Apoorva Oak; Ryoung-han Kim

doi:10.1117/12.3035717

26 August 2024 Exploring high-NA EUV mask specification for logic metal

Kenichi Miyaguchi, Soobin Hwang, Apoorva Oak, Ryoung-han Kim

Author Affiliations +

Proceedings Volume 13177, Photomask Japan 2024: XXX Symposium on Photomask and Next-Generation Lithography Mask Technology; 131770G (2024) https://doi.org/10.1117/12.3035717
Event: Photomask Japan 2024, 2024, Yokohama, Japan

Abstract

We explore high Numerical Aperture (NA) Extreme Ultraviolet (EUV) mask specification for logic metal layer targeting A7 node. A requirement of minimum Critical Dimension (CD) of absorber on mask is investigated by Source Mask Optimization (SMO) and wafer printing simulation for pitch 20nm logic metal pattern in a horizontal direction. The Sub-Resolution Assist Feature (SRAF) horizontal absorber line width needs to be less than 4nm (1X) to avoid being printed on wafer. A minimum absorber line end tip-to-tip is also explored as a key metrics of high NA single patterning limit in Bright-Field (BF) mask with a benefit of low-n attenuated phase-shift mask.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Kenichi Miyaguchi, Soobin Hwang, Apoorva Oak, and Ryoung-han Kim "Exploring high-NA EUV mask specification for logic metal", Proc. SPIE 13177, Photomask Japan 2024: XXX Symposium on Photomask and Next-Generation Lithography Mask Technology, 131770G (26 August 2024); https://doi.org/10.1117/12.3035717

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