Paper
26 August 2024 Can we improve the energy efficiency of EUV lithography?
Author Affiliations +
Abstract
This paper discusses a simple, low-cost, highly efficient two-mirror projector with a simplified illumination system. The EUV source power can be reduced by 1/10 compared to the current six-mirror EUV projector system. The required EUV power is 20 watts for process speed of 100 wafers per hour. The proposed in-line projector achieves 0.2 NA (20 mm field) and 0.3 NA (10 mm field), which can be assembled in a cylindrical tube configuration similar to a DUV projector, providing superior mechanical stability and easier assembly/maintenance. The EUV light is introduced in front of the mask through two narrow cylindrical mirrors located on both side of the diffraction cone, providing average normal illumination and reducing the mask 3D effect. The simplified illumination system provides symmetric quadrupole off-axis illumination, bypassing central obscuration and improving spatial resolution, also realizing Köhler illumination. The theoretical resolution limit is 24 nm (20 mm field), image reduction factor x5 and Object Image Distance (OID) 2000 mm. With the curved surface mask, the tool height can be reduced to (OID) 1500 mm, which provides resolution 16 nm (10 mm field). It will be suitable for small die size chip production for mobile applications as well as the latest chiplet technology.
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Tsumoru Shintake "Can we improve the energy efficiency of EUV lithography?", Proc. SPIE 13177, Photomask Japan 2024: XXX Symposium on Photomask and Next-Generation Lithography Mask Technology, 131770M (26 August 2024); https://doi.org/10.1117/12.3035018
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KEYWORDS
Mirrors

Light sources and illumination

Extreme ultraviolet

Diffraction

Projection systems

Semiconducting wafers

Design

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