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26 August 2024 AFM nanomachining and clean repair of EUV TaBN and high-k advanced absorber materials
Tod Robinson, Maria J. Cadena
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Proceedings Volume 13177, Photomask Japan 2024: XXX Symposium on Photomask and Next-Generation Lithography Mask Technology; 131770R (2024) https://doi.org/10.1117/12.3032093
Event: Photomask Japan 2024, 2024, Yokohama, Japan
Abstract
In prior work, the capability of novel nanomachining processes to repair TaN EUV absorber materials was shown using 1.8 aspect ratio (AR) AFM tips in line and space patterns down to 90 nm half-pitch. While these repair results were well within the requirements for EUV printability, they only demonstrated the capability to repair an absorber material which has become obsolete with the rapid development of EUVL technology. The introduction of boron into the absorber chemistry indicates a significant increase in the hardness of this material which can be a significant factor in tip deflection in nanomachining. In this work, test repair results are shown for an advanced EUV absorber stack containing a TaBN formulation. The repair dimensional accuracy and repeatability are analyzed along with the throughput and tip wear rates for this nanomachining process. The capability of the BitClean process to clean and finish these repairs will also be shown for this absorber type.
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
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Tod Robinson and Maria J. Cadena "AFM nanomachining and clean repair of EUV TaBN and high-k advanced absorber materials", Proc. SPIE 13177, Photomask Japan 2024: XXX Symposium on Photomask and Next-Generation Lithography Mask Technology, 131770R (26 August 2024); https://doi.org/10.1117/12.3032093
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KEYWORDS
Extreme ultraviolet
Atomic force microscopy
Photomasks
Critical dimension metrology
Reflectivity
Contamination
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