Mo/Si multilayer improvements for EUV photomask performance

Kenji Yamamoto; Antonio Checco; Katrina Rook; Maryam Souri; Marjorie Chee; Meng H. Lee

doi:10.1117/12.3034862

26 August 2024 Mo/Si multilayer improvements for EUV photomask performance

Kenji Yamamoto, Antonio Checco, Katrina Rook, Maryam Souri, Marjorie Chee, Meng H. Lee

Author Affiliations +

Proceedings Volume 13177, Photomask Japan 2024: XXX Symposium on Photomask and Next-Generation Lithography Mask Technology; 1317713 (2024) https://doi.org/10.1117/12.3034862
Event: Photomask Japan 2024, 2024, Yokohama, Japan

Abstract

Optical calculation and experimental data are presented for the impact of reflectivity of the Mo/Si multilayers for EUV photomasks deposited by secondary Ion Beam Deposition (IBD). Simulations of Mo/Si multilayer stacks in which the bottom-most 30 bilayers remain intermixed, and up to ten top bilayers are not intermixed at all or less intermixed is revealed to have the benefit of approximately 2.5% of reflectivity improvement while the simulation of 40-bilayer stack which has a typical intermixed layers of 1.1nm at the interface on top of the Silicon and 0.5nm at the interface on top of the Molybdenum indicate a maximum reflectivity of 68.5%. The multiple beam voltage deposited multilayers with lower beam voltage for top bilayers and with higher beam voltage for bottom bilayers are demonstrated and discussed using XRR measurement and TEM observation.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Kenji Yamamoto, Antonio Checco, Katrina Rook, Maryam Souri, Marjorie Chee, and Meng H. Lee "Mo/Si multilayer improvements for EUV photomask performance", Proc. SPIE 13177, Photomask Japan 2024: XXX Symposium on Photomask and Next-Generation Lithography Mask Technology, 1317713 (26 August 2024); https://doi.org/10.1117/12.3034862

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KEYWORDS

Reflectivity

Extreme ultraviolet

Silicon

Simulations

Interfaces

Ion beams

Molybdenum

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