Progress on InGaAs-based SPAD fabrication for SWIR detection and imaging

Frank Rutz; Andreas Wörl; Andreas Bächle; Jasmin Niemasz; Robert Rehm

doi:10.1117/12.3031445

1 November 2024 Progress on InGaAs-based SPAD fabrication for SWIR detection and imaging

Frank Rutz, Andreas Wörl, Andreas Bächle, Jasmin Niemasz, Robert Rehm

Author Affiliations +

Proceedings Volume 13200, Electro-Optical and Infrared Systems: Technology and Applications XXI; 132000Z (2024) https://doi.org/10.1117/12.3031445
Event: Security + Defence, 2024, Edinburgh, United Kingdom

Abstract

Time-of-flight imaging techniques are utilized for 3D-scene reconstructions and non-line-of-sight imaging capable of revealing persons or objects hidden behind obstacles. Such sensor systems usually demand for high-performance photodetectors with single-photon detection capabilities due to the high reflection losses of the emitted laser pulses during multiple, usually diffuse reflections from a relay wall and the actual scene of interest. To further compensate the high signal loss, a laser wavelength in the eye-safe Short-Wave Infrared (SWIR) spectral range, typically around 1550 nm, allows for higher laser intensities. In turn, SWIR-matching Single-Photon Avalanche Diodes (SPADs) need to be fabricated from adequate semiconductor materials, e.g., the InGaAs/InP material system. We report on the progress of the InGaAs/InP-SPAD fabrication using a customized process technology. The key technology is the planar process technology via zinc diffusion to produce spatially confined p-type regions. For the zinc-diffusion process, a novel method of selective epitaxial overgrowth was developed. Following a prior recess-etch step, the single-step Zn-diffusion process results in the intended double-well-shaped doping profile. Experimental data of thus fabricated InGaAs/InP SPADs show the expected dark-current, photo-current, and multiplication-gain characteristics in linear-mode operating as well as dark count rates in Geiger-mode operation around 200 – 220 K, which corresponds to a typical operating temperature for InGaAs/InP SPADs achievable by thermoelectric cooling.

Conference Presentation

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Frank Rutz, Andreas Wörl, Andreas Bächle, Jasmin Niemasz, and Robert Rehm "Progress on InGaAs-based SPAD fabrication for SWIR detection and imaging", Proc. SPIE 13200, Electro-Optical and Infrared Systems: Technology and Applications XXI, 132000Z (1 November 2024); https://doi.org/10.1117/12.3031445

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