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While metal oxide resists showing good patterning performance and etching durability have been developed for a next generation resist as negative type resist, high performance positive tone resists are still needed for logic device manufacturing. We recently developed an organometal resist based on polarity change and chain scission, which resolved 22nm HP L/S pattern in EB drawing. However, it has some problems including film thickness loss and scum formation after development in the unexposed and exposed area, respectively. In this work, to resolve these problems, we attempted modification of our polymer-type resists in terms of chemical reactions that occurs in the exposed area. The results were discussed from their dissolution behavior by QCM method and printability by EB patterning. We found that newly designed anion D improved dissolution rate of exposed area and suppressed scum formation in exposed area. Our resist in this work resolved less than 20nm line and space patterns by such alkyl acetates as butyl acetate and PGMEA as developers.
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