Presentation + Paper
12 November 2024 Unfolding the curves: novel designs and metrology methods for curvilinear masks qualification
Author Affiliations +
Abstract
The ongoing scaling of semiconductor devices necessitates increasing development of new and disruptive technologies. Curvilinear layout design and optical proximity correction (OPC) are among the innovations facilitating these advancements in technologies. However, they face challenges in mask enablement technology, including issues with mask writing, data volume management, design complexity, mask data representation, mask qualification, and metrology. In this paper, curvilinear mask test patterns and measurement methodologies are newly proposed for mask qualification and masks specification. Using contour-based mask metrology, edge placement error (EPE), mean-to-target (MTT) and uniformity (CDU) based on target maximum curvature (TMC) are measured and used as the main qualification metrics instead of traditional metrics such as critical dimensions (CD). These novel methods will partly complement standard qualification methods used for non-curvilinear (Manhattan) masks. A set of unique mask test structures are also proposed to extract the minimum set of curvilinear mask rules which enables experimental definition and verification of the manufacturing process.
Conference Presentation
© (2024) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Darko Trivković, Xuelong Shi, Yi-Pei Tsai, Chieh-Miao Chang, Jane Wang, Victoria Malacara, Balakumar Baskaran, Youssef Drissi, Joost Bekaert, and Kenichi Miyaguchi "Unfolding the curves: novel designs and metrology methods for curvilinear masks qualification", Proc. SPIE 13216, Photomask Technology 2024, 132160I (12 November 2024); https://doi.org/10.1117/12.3036470
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KEYWORDS
Photomasks

Critical dimension metrology

Metrology

Optical proximity correction

Manufacturing

Industry

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