Simulation study on the effect of voltage on multicell upset of FinFET SRAM

Qi Zhang; Suge Yue; Yanlong Zhang; Jingshuang Yuan; Yongqin Zhu; Tongde Li; Liang Wang

doi:10.1117/12.3039322

4 September 2024 Simulation study on the effect of voltage on multicell upset of FinFET SRAM

Qi Zhang, Suge Yue, Yanlong Zhang, Jingshuang Yuan, Yongqin Zhu, Tongde Li, Liang Wang

Proceedings Volume 13259, International Conference on Automation Control, Algorithm, and Intelligent Bionics (ACAIB 2024); 132593F (2024) https://doi.org/10.1117/12.3039322
Event: Fourth International Conference on Automation Control, Algorithm, and Intelligent Bionics (ICAIB 2024), 2024, Yinchuan, China

Abstract

With the continuous expansion of circuit scale, it is required that SRAM has good resistance to single event upset under different power voltages. Therefore, To investigate the effect of power voltage on multi cell upset of SRAM in FinFET process, simulation was conducted to investigate the effect of ions incidence at different positions on four cell FinFET SRAM under different power voltage conditions. Research has found that the combined effects of charge sharing and parasitic bipolar effects determine whether the SRAM cell upset. When ions are incident on the sensitive drain region, the multi cell upset is mainly determined by the charge sharing effect. As the power voltage increases, the ability of SRAM to resist single event upset is enhanced. When ions are incident into the well region, the drift charge collection mechanism of the sensitive drain region and the parasitic bipolar effect compete with each other to determine whether the cell upset. As the power voltage decreases, drift collection weakens, and the parasitic bipolar mechanism makes it easier for the cell to upset and recover. The results of this study have guiding significance for carrying out anti multi cell upset radiation reinforcement for FinFET SRAM.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Qi Zhang, Suge Yue, Yanlong Zhang, Jingshuang Yuan, Yongqin Zhu, Tongde Li, and Liang Wang "Simulation study on the effect of voltage on multicell upset of FinFET SRAM", Proc. SPIE 13259, International Conference on Automation Control, Algorithm, and Intelligent Bionics (ACAIB 2024), 132593F (4 September 2024); https://doi.org/10.1117/12.3039322

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