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1 October 1990 Paramagnetic centers induced by ArF excimer laser irradiation in high-purity silica glasses
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Highpurity silica glasses prepared by various manufacturing methods were investigated after irradiation with an ArF excimer laser. Defect species and concentrations were found to be dependent on oxygen stoichiometry and impurities: E'' centers are induced in oxygendeficient high-OH silica at concentrations of 1O''6/cm3 while at one or two orders of lower concentrations in other types of samples. Defect centers in yirradiated silicas studied for comparison show a similar dependency on oxygen stoichiometry and impurities. In addition O ions are observed in oxygensurplus samples after yirradiation which were creates presumably by the trapping of free electrons. Isochronal annealing experiments indicate that the annealing of E'' centers in ArFlaser irradiated samples are due to the diffusion of 02 and H20. 1 .
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hiroyuki Nishikawa, Ryuta Nakamura, Ryoichi Tohmon, Yoshimichi Ohki, Yoshimasa Hama, Yuryo Sakurai, and Kaya Nagasawa "Paramagnetic centers induced by ArF excimer laser irradiation in high-purity silica glasses", Proc. SPIE 1327, Properties and Characteristics of Optical Glass II, (1 October 1990);


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