Raman-scattering characterization of atomic layer semiconductor superlattices

David J. Lockwood

doi:10.1117/12.22889

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1 November 1990 Raman-scattering characterization of atomic layer semiconductor superlattices

David J. Lockwood

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Proceedings Volume 1336, Raman and Luminescence Spectroscopies in Technology II; (1990) https://doi.org/10.1117/12.22889
Event: 34th Annual International Technical Symposium on Optical and Optoelectronic Applied Science and Engineering, 1990, San Diego, CA, United States

Abstract

Raman spectroscopy is a widely applied technique for investigating the dynamical and structural properties of atomic-layer semiconductor superlawces. The low-frequency acoustic phonons in such structures are influenced by the average lattice properties, the overall periodicities within the structure, and the boundary conditions, whereas the optic phonons are sensitive to the local structure, the nature of the interfaces, and the intralayer strain. Examples taken from recent studies of phonons in thin layer superlattices composed of GaAS/AlAS, InAs/GaSb and SilGe are used to demonstrate the usefulness of the Raman technique.

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David J. Lockwood "Raman-scattering characterization of atomic layer semiconductor superlattices", Proc. SPIE 1336, Raman and Luminescence Spectroscopies in Technology II, (1 November 1990); https://doi.org/10.1117/12.22889

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