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1 November 1990 Raman spectroscopy of the II-V vacancy ordered semiconductor Zn3As2
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We report evidence of a new long-range order in singleS-crystal Zn3As2 grown epitaxially on lattice-inisinatched InP and GaAs. The Raman activity of the layers confirm, in contrast to the bulk C4,'2 syirmietry, a space group of D4h'5 for the epilayers. Thermodynamic considerations show that the dependence of the free energy on the lattice parameters of this 11-V compound may be sufficient to account for the stability of the new structure. Such preferential stability in these ordered defect, single crystalline materials is not unlike the occurrence of long range order reported recently in several III-'V and IV-IV semiconductor alloys grown on bulk substrates. We identify a process analogous to stress induced Zener relaxation that could yield the new order.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Gerardo I. Pangilinan, R. Sooryakumar, Bhanu Chelluri, and Tao Yuan Chang "Raman spectroscopy of the II-V vacancy ordered semiconductor Zn3As2", Proc. SPIE 1336, Raman and Luminescence Spectroscopies in Technology II, (1 November 1990);

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