Evaluation of a far-infrared Ge:Ga multiplexed detector array

Jam Farhoomand; Craig R. McCreight

doi:10.1117/12.23045

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1 November 1990 Evaluation of a far-infrared Ge:Ga multiplexed detector array

Jam Farhoomand, Craig R. McCreight

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Proceedings Volume 1340, Cryogenic Optical Systems and Instruments IV; (1990) https://doi.org/10.1117/12.23045
Event: 34th Annual International Technical Symposium on Optical and Optoelectronic Applied Science and Engineering, 1990, San Diego, CA, United States

Abstract

The performance of a multielement Ge:Ga linear array under low-background conditions is investigated. On-focal plane switching is accomplished by MOSFET switches and the integrated charge is made available through MOSFET source followers. The tests were conducted at 106 microns and the radiation on the detectors was confined to a spectral window 1.25 microns wide using a stack of cold filters. At 4.2 K, the responsivity was measured to be nominally 584 A/W, and the NEP was 1.0 x 10 exp -16 W/sq rt Hz. A detailed description of the test setup and the procedure is presented.

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Jam Farhoomand and Craig R. McCreight "Evaluation of a far-infrared Ge:Ga multiplexed detector array", Proc. SPIE 1340, Cryogenic Optical Systems and Instruments IV, (1 November 1990); https://doi.org/10.1117/12.23045

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