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1 November 1990 GaAs/AlGaAs multiquantum-well IR detectors
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Abstract
GaAs/Al(0.31)Ga(0.69)As IR detector of multiquantum well structure with a single bound state in a GaAs well have been fabricated. The peak wavelength of spectral responsivity at 77 K was 8.3 microns. The measured responsivities were 20 V/W for A-type detectors, 65 V/W for B-type detectors, and 130 V/W for C-type detectors. The corresponding specific detectivities at peak wavelength were 2.8 x 10 exp 9 cm sq rt Hz/W, 2.7 x 10 exp 9 cm sq rt Hz/W, and 2.7 x 10 exp 9 cm sq rt Hz/W, respectively. These values are about one order lower than those of conventional CdHgTe photoconductive devices.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Masatoshi Kobayashi, Masahiko Nakanishi, Y. Notani, K. Aono, Yoshiharu Komine, and Wataru Susaki "GaAs/AlGaAs multiquantum-well IR detectors", Proc. SPIE 1341, Infrared Technology XVI, (1 November 1990); https://doi.org/10.1117/12.23078
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