Research on influencing factors of surface morphology of InxGa1-xAs thin film on Si substrate

Chengsi Lian; Shiyi Yuan; Yiheng Qi; Heng Wei; Han Yan; Peng Li

doi:10.1117/12.3050197

12 December 2024 Research on influencing factors of surface morphology of In_xGa_1-xAs thin film on Si substrate

Chengsi Lian, Shiyi Yuan, Yiheng Qi, Heng Wei, Han Yan, Peng Li

Author Affiliations +

Proceedings Volume 13419, Tenth International Conference on Energy Materials and Electrical Engineering (ICEMEE 2024); 134191I (2024) https://doi.org/10.1117/12.3050197
Event: Tenth International Conference on Energy Materials and Electrical Engineering (ICEMEE 2024), 2024, Lhasa, China

Abstract

The epitaxial growth of In_xGa_1-xAs thin films at different atomic incidence angles and In-Ga atomic proportions was simulated by molecular dynamics (MD) method. The surface morphology, surface roughness and atomic distribution of In_xGa_1-xAs thin films deposited at different atomic deposition angles and In-Ga atomic proportions were analyzed. The results show that reducing the incidence angle of atoms and maintaining the In atomic proportions at 0.75 are beneficial to reduce the surface roughness and make the atomic arrangement in the thin films more orderly, thus improving the surface quality of In_xGa_1-xAs thin films.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Chengsi Lian, Shiyi Yuan, Yiheng Qi, Heng Wei, Han Yan, and Peng Li "Research on influencing factors of surface morphology of In_xGa_1-xAs thin film on Si substrate", Proc. SPIE 13419, Tenth International Conference on Energy Materials and Electrical Engineering (ICEMEE 2024), 134191I (12 December 2024); https://doi.org/10.1117/12.3050197

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