Paper
12 December 2024 Voltage controls spin reorientation transition in TmFeO3 thin films
Lei Zhang, Lichuan Jin
Author Affiliations +
Proceedings Volume 13419, Tenth International Conference on Energy Materials and Electrical Engineering (ICEMEE 2024); 1341944 (2024) https://doi.org/10.1117/12.3050368
Event: Tenth International Conference on Energy Materials and Electrical Engineering (ICEMEE 2024), 2024, Lhasa, China
Abstract
We present a study on the voltage control of the spin reorientation transition in TmFeO3 thin films grown on PMN-PT ferroelectric substrates. Notably, we demonstrate the ability to manipulate the temperature range of this transition using an applied voltage. As the voltage increases, there is a gradual expansion of the temperature range associated with spin reorientation transition. The observed changes could be attributed to the strain-induced modifications in ion coupling strength within the TmFeO3 thin film. These significant findings lay a solid foundation and offer a promising prospect for designing spintronic devices.
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Lei Zhang and Lichuan Jin "Voltage controls spin reorientation transition in TmFeO3 thin films", Proc. SPIE 13419, Tenth International Conference on Energy Materials and Electrical Engineering (ICEMEE 2024), 1341944 (12 December 2024); https://doi.org/10.1117/12.3050368
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KEYWORDS
Thin films

Magnetism

Ions

Control systems

Crystals

Iron

Temperature metrology

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