Translator Disclaimer
1 February 1991 XUV resist characterization: studies with a laser plasma source
Author Affiliations +
A monochromatized laser-produced plasma source of XUV radiation has been used to study resists for use in projection x-ray lithography. We report the characterization of exposure sensitivity and contrast of poly(cyclohexylmethyl-co-trimethylsilylmethylsilane) (CMTMS) at photon energies near 100 eV, where projection x-ray lithography is being developed. Using monochromatized XUV exposures on the Si-Si a resonance at 105 eV, followed by solvent dissolution development, the polysilane yields positive tone, exhibiting a sensitivity of 600 mJ/cm2 to achieve a saturation depth of 0.17 p.m and a contrast of 1.4. Beyond this saturation dose, the tone is observed to reverse (i.e. greater doses yield smaller developed depths). Exposure sensitivity measurements have also been performed below the edge at 92 eV where we find only minor differences in contrast and saturation dose from the results at 105 eV. These can be accounted for by a simple decrease in film absorption. The exposure sensitivities of selected commercially-available electron beam resists have also been characterized. Two PMMA resists (M =74 K and 500 K) and the novolac-based SYSThM-9 (Shipley Co.) have been exposed to monochromatized radiation at 140 A. PMMA exhibits a sensitivity of 600 mJ/cm2 (0.58 m developed depth) and a contrast of 1.8 while the SYSTEMTh-9 resist requires only 22 mJ/cm2 (0.43 depth) and exhibits a contrast of 4. 1.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Glenn D. Kubiak "XUV resist characterization: studies with a laser plasma source", Proc. SPIE 1343, X-Ray/EUV Optics for Astronomy, Microscopy, Polarimetry, and Projection Lithography, (1 February 1991);

Back to Top