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1 November 1990 Silicon photodiodes optimized for the EUV and soft x-ray regions
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Abstract
Available photodiodes are reviewed with attention given to the performance parameters, temporal stability, and appropriateness for narrow bandpass applications and certain photon energies. The configuration of XUV photodiodes for use in the EUV and soft X-ray regions is delineated, and the measured parameters are outlined. The photodiodes have stable efficiencies that vary linearly with photon energy and exceed 1 electron/incident photon for photon energies of at least 10 eV. The silicon photodiodes are found to be suitable for EUV and soft X-ray applications and are stable, very highly efficient, and are unaffected by operation under high gas pressures. The silicon dioxide outer surface can be coated with thin films to develop narrow bandpass applications. The present XUV silicon detectors have active areas of 1 or 3 sq cm and can be used with an instrument for measuring photocurrent without external power supplies.
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
L. Randall Canfield, Jonathan A. Kerner, and Raj S. Korde "Silicon photodiodes optimized for the EUV and soft x-ray regions", Proc. SPIE 1344, EUV, X-Ray, and Gamma-Ray Instrumentation for Astronomy, (1 November 1990); https://doi.org/10.1117/12.23265
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