Breaking performance barriers: AlN spacer integration boosts GaN HEMTs to higher drive drain current for HEMT-LED

Wagma Hidayat; Muhammad Usman; Syeda Wageeha Shakir; Anum .; Iqra Anjum; Shazma Ali; Laraib Mustafa

doi:10.1117/12.3051934

4 December 2024 Breaking performance barriers: AlN spacer integration boosts GaN HEMTs to higher drive drain current for HEMT-LED

Wagma Hidayat, Muhammad Usman, Syeda Wageeha Shakir, Anum ., Iqra Anjum, Shazma Ali, Laraib Mustafa

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Proceedings Volume 13440, Fourth iiScience International Conference 2024: Recent Advances in Photonics and Physical Sciences; 1344003 (2024) https://doi.org/10.1117/12.3051934
Event: Fourth iiScience International Conference 2024: Recent Advances in Photonics and Physical Sciences, 2024, Lahore, Pakistan

Abstract

High-electron-mobility transistor (HEMT) devices made of gallium nitride can produce significant power and high frequency with performance levels that surpass those of conventional silicon and other cutting-edge semiconducting FET technologies. In this paper, we simulate and analyze the outcomes of two high-electron mobility transistor (HEMT) designs. One arrangement, named as conventional structure, consists of an AlGaN layer stacked above a GaN layer forming a heterojunction. At this junction, a two-dimensional electron gas (2DEG) layer is created, which serves as the structure's distinguishing feature. To enhance the device performance, the alternative structure, named as proposed structure, adds an AlN spacer in the middle of the existing AlGaN and GaN films. In this study, a very high maximum saturation drain current is reported with appropriate optimization parameters. The study compares the energy band diagram, electric field arrangement, and drain output curves of both structures. Furthermore, this research suggests that combining AlGaN/AlN/GaN HEMTs with LEDs can enhance the functionality of LEDs from an application standpoint. The simulations are performed by utilizing APSYS CROSSLIGHT software and it is shown that the proposed structure has outstanding outcomes.

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Wagma Hidayat, Muhammad Usman, Syeda Wageeha Shakir, Anum ., Iqra Anjum, Shazma Ali, and Laraib Mustafa "Breaking performance barriers: AlN spacer integration boosts GaN HEMTs to higher drive drain current for HEMT-LED", Proc. SPIE 13440, Fourth iiScience International Conference 2024: Recent Advances in Photonics and Physical Sciences, 1344003 (4 December 2024); https://doi.org/10.1117/12.3051934

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KEYWORDS

Gallium nitride

Aluminum nitride

Field effect transistors

Electric fields

Light emitting diodes

Aluminum gallium nitride

Transistors

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