Vertical conductivity and atomic-level reconstruction in small-angle twisted MoS₂ homostructures

Er Pan; Zefen Li; Qing Liu; Fucai Liu

doi:10.1117/12.3052692

12 December 2024 Vertical conductivity and atomic-level reconstruction in small-angle twisted MoS₂ homostructures

Er Pan, Zefen Li, Qing Liu, Fucai Liu

Proceedings Volume 13446, Sixth International Conference on Optoelectronic Science and Materials (ICOSM 2024); 1344608 (2024) https://doi.org/10.1117/12.3052692
Event: 6th International Conference on Optoelectronic Science and Materials (ICOSM 2024), 2024, Hefei, China

Abstract

Twisted interface structure of two-dimensional materials offers nearly limitless platforms for the design of novel metamaterials. The natures of these twisted systems depend strongly on the twisted angle between adjacent layers. Due to the intriguing optical and electronic properties observed in twisted graphene and transition metal dichalcogenides, this field has attracted increased attention. Here, we employ conductive atomic force microscopy (CAFM) to investigate the vertical conductivity of small twisted bilayer MoS₂ (ST-MoS₂). We find that different atomic configurations exhibit distinct vertical conductivities, and it exhibits uniform conductivity within the domains, providing insights into the design and optimization of its optical and electronic natures.

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Er Pan, Zefen Li, Qing Liu, and Fucai Liu "Vertical conductivity and atomic-level reconstruction in small-angle twisted MoS₂ homostructures", Proc. SPIE 13446, Sixth International Conference on Optoelectronic Science and Materials (ICOSM 2024), 1344608 (12 December 2024); https://doi.org/10.1117/12.3052692

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KEYWORDS

Electrical conductivity

Interfaces

Graphene

Monolayers

2D materials

Electrical properties

Heterojunctions

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