Paper
12 December 2024 Polarization-driven edge state transition in MoS2/WS2 lateral heteroribbon
Nian Liu, Changming Xie, Yan Zhang
Author Affiliations +
Proceedings Volume 13446, Sixth International Conference on Optoelectronic Science and Materials (ICOSM 2024); 134460U (2024) https://doi.org/10.1117/12.3052611
Event: 6th International Conference on Optoelectronic Science and Materials (ICOSM 2024), 2024, Hefei, China
Abstract
Two-dimensional monolayer transition metal dichalcogenides have attracted a lot of attention owing to their excellent physical properties. The significant polarization field induced by external strain within two-dimensional piezoelectric semiconductor materials can effectively regulate the properties of the materials. In this article, the edge-state of MoS2/WS2 lateral heteroribbon has been theoretically investigated by three-orbital tight-binding model. And the piezotronic effect on the edge state is also studied. The external in-plane stress can induce a metallic-to-semiconducting phase transition. This study offers an effective way to module the electric properties of lateral heterostructure.
(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.
Nian Liu, Changming Xie, and Yan Zhang "Polarization-driven edge state transition in MoS2/WS2 lateral heteroribbon", Proc. SPIE 13446, Sixth International Conference on Optoelectronic Science and Materials (ICOSM 2024), 134460U (12 December 2024); https://doi.org/10.1117/12.3052611
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KEYWORDS
Molybdenum

Heterojunctions

Interfaces

Polarization

Monolayers

Transition metals

Elasticity

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