Application of epitaxial lift-off to optoelectronic material studies

Garth L. Price; Brian F. Usher

doi:10.1117/12.24417

1 March 1991 Application of epitaxial lift-off to optoelectronic material studies

Garth L. Price, Brian F. Usher

Proceedings Volume 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization; (1991) https://doi.org/10.1117/12.24417
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

Work in progress and completed studies in epitaxial liftoff by a number of workers in these Laboratories are reviewed. The areas include waxless chemical release on patterned substrates the liftoff of optical filters and of optical modulators for potential integration with silicon and the regrowth of unstrained films of arbitrary lattice constant on strained MBE grown InGaAs layers which have been chemically released from the underlying substrate. An extremely strong excitonic absorption has been discovered in 1pm GaAs liftoff films and strain measurements on these films have given hydrostatic and uniaxial deformation potentials.

Citation Download Citation

Garth L. Price and Brian F. Usher "Application of epitaxial lift-off to optoelectronic material studies", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24417

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