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1 March 1991 Bistable optical switching in GaAs multiple-quantum-well epitaxial etalons
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Abstract
Epitaxial methods allow the fabrication of nonlinear interferomethc structures which include the mirrors and the GaAs Multiple Quantum Wells (MQW) nonlinear medium in a single crystal. This results in very compact nonlinear microcavities with typically 5im overall thickness. Optical bistability is observed in these structures at mW optical power. We review our latest experimental results on these structures including the observation of high contrast switching in the reflection mode the direct measurement of dispersive optical nonlinearities in MQWs evidencing their saturation behavior at high intensities. Finally we report external-beam switching experiments which allow to assess the potential of these structures as all-optical gates.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jean-Louis Oudar, Bruno Sfez, and Robert Kuszelewicz "Bistable optical switching in GaAs multiple-quantum-well epitaxial etalons", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24383
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