Defect-induced stabilization of Fermi level in bulk silicon and at the silicon-metal interface

Ryszard J. Iwanowski; Jakub J. Tatarkiewicz

doi:10.1117/12.24440

1 March 1991 Defect-induced stabilization of Fermi level in bulk silicon and at the silicon-metal interface

Ryszard J. Iwanowski, Jakub J. Tatarkiewicz

Proceedings Volume 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization; (1991) https://doi.org/10.1117/12.24440
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

The authors perform an analysis of silicon defect stncture as a function of irradiation dose based mainly on their infrared absorption data for neutron-damaged Si and the available literature results for neutron- and electron-irradiated Si . Remarkable correlations between Fermi level position in irradiated Si and at the silicon - (reactive and unreactive ) metal interface are presented and discussed.

Citation Download Citation

Ryszard J. Iwanowski and Jakub J. Tatarkiewicz "Defect-induced stabilization of Fermi level in bulk silicon and at the silicon-metal interface", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24440

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