Differentiation of the nonradiative recombination properties of the two interfaces of molecular beam epitaxy grown GaAs-GaAlAs quantum wells

Bernard Sermage; Jean Michel Gerard; Lorenzo Bergomi; Jean Yves Marzin

doi:10.1117/12.24392

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1 March 1991 Differentiation of the nonradiative recombination properties of the two interfaces of molecular beam epitaxy grown GaAs-GaAlAs quantum wells

Bernard Sermage, Jean Michel Gerard, Lorenzo Bergomi, Jean Yves Marzin

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Proceedings Volume 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization; (1991) https://doi.org/10.1117/12.24392
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

The repartition ofnonradiative recombination centers density in a quantum well has been tested by timeresolved luminescence in samples containing an InAs plane inside a 16 nm wide GaAs well in Ga7AL3As. The results show unambiguously that more non radiative centers are located near the first grown interface. The non radiative carriers lifetime () vary between 4 ns when the InAs monolayer is close to the inverted interface and 8 ns when it is near the direct one.

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Bernard Sermage, Jean Michel Gerard, Lorenzo Bergomi, and Jean Yves Marzin "Differentiation of the nonradiative recombination properties of the two interfaces of molecular beam epitaxy grown GaAs-GaAlAs quantum wells", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24392

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