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1 March 1991 Equilibrium and nonequilibrium properties of semiconductors with multiply ionizable deep centers
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Abstract
The local thermodynamic equilibrium as well as the non-equilibrium properties of crystal defects in semiconductors are discussed with emphasis on such configurations that allow for multiple ionization and electronic excitation. A system of rate equations is developed which describes the temporal change of the occupation numbers of the different energy levels; it includes the processes of free charge carrier capturing as well as thermal emission. The results of the investigation can be used, for example, to obtain a more realistic dynamic description of the occupation of the chromium induced energy levels in gallium arsenide which play an important role as recombination centers in material for fast photonic switching.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ralf Peter Brinkmann, Karl H. Schoenbach, and Hans-Joachim Schulz "Equilibrium and nonequilibrium properties of semiconductors with multiply ionizable deep centers", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24401
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