Excitonic photoabsorption study of AlGaAs/GaAs multiple-quantum-well grown by low-pressure MOCVD

O'Dae Kwon; Seung-Won Lee; Woong-Lim Choi; Kwang-Il Kim; Yoon-Ha Jeong

doi:10.1117/12.24293

1 March 1991 Excitonic photoabsorption study of AlGaAs/GaAs multiple-quantum-well grown by low-pressure MOCVD

O'Dae Kwon, Seung-Won Lee, Woong-Lim Choi, Kwang-Il Kim, Yoon-Ha Jeong

Proceedings Volume 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization; (1991) https://doi.org/10.1117/12.24293
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

GaAS I AIGaAs multiple quantum well structures grown by low pressure metal organic chemical vapor deposition have been studied using electron microscopy photoluminescence photoabsorption and photocurrent spectroscopies. Room temperature exciton doublets quantum confined Stark shifts were observed and analysed.

Citation Download Citation

O'Dae Kwon, Seung-Won Lee, Woong-Lim Choi, Kwang-Il Kim, and Yoon-Ha Jeong "Excitonic photoabsorption study of AlGaAs/GaAs multiple-quantum-well grown by low-pressure MOCVD", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24293

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