Fabrication technology of strained layer heterostructure devices

Marc Van Rossum

doi:10.1117/12.24372

1 March 1991 Fabrication technology of strained layer heterostructure devices

Marc Van Rossum

Proceedings Volume 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization; (1991) https://doi.org/10.1117/12.24372
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

The paper reviews some recent developments in fabrication technology for nanoscale devices. The latter require a combination of high resolution lithography shallow electrical contacts and highly controllable patterning techniques. The main objective to be met is a precise geometrical definition of the structures (at the nanometer scale) without loss of electrical performance. Applications are discussed in the field of ultra-submicron HEMTs and resonant tunneling devices.

Citation Download Citation

Marc Van Rossum "Fabrication technology of strained layer heterostructure devices", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24372

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