High-performance metal/SiO2/InSb capacitor fabricated by photoenhanced chemical vapor deposition

Tai Ping Sun; Si-Chen Lee; Kou-Chen Liu; Yen-Ming Pang; Sheng-Jehn Yang

doi:10.1117/12.24333

1 March 1991 High-performance metal/SiO2/InSb capacitor fabricated by photoenhanced chemical vapor deposition

Tai Ping Sun, Si-Chen Lee, Kou-Chen Liu, Yen-Ming Pang, Sheng-Jehn Yang

Proceedings Volume 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization; (1991) https://doi.org/10.1117/12.24333
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

The high performance AuCr/Si02/InSb metal-oxidesemiconductor capacitor was fabricated successfully using photo-enhanced chemical vapor deposition. The 1200 A thick Si02 layer was deposited on the InSb substrate at the temperature below 200 °C. Their electrical and structural properties were analyzed by capacitance-voltage and Auger electron spectroscopy, respectively. The capacitance-voltage results show that the optimal growth temperature of Si02 is 150 °C at which the fiat-band voltage of the capacitor is close to ideal and slow interface state density is less than 5 x 1O'° cm2. For Si02 deposited at lower temperature, although the flatband voltage and interface state are poorer, the subsequent thermal annealing at 150 °C for 12 hours improves both quantities to the level as the optimal condition. However, for Si02 deposited at higher temperature (190 °C), the flatband voltage shifts to -4 V and the slow state density increases to 1.1 x 1011 cm2. It is found from Auger depth profile that whatever the deposition temperature was a Si-rich region followed by an oxygen-rich region was formed at the 5i02/InSb interface. These observations are shown to be consistent with the electrical characteristics of the capacitor.

Citation Download Citation

Tai Ping Sun, Si-Chen Lee, Kou-Chen Liu, Yen-Ming Pang, and Sheng-Jehn Yang "High-performance metal/SiO2/InSb capacitor fabricated by photoenhanced chemical vapor deposition", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24333

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KEYWORDS

Interfaces

Capacitors

Chemical species

Oxides

Molybdenum

Silicon

Annealing

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