Interaction of hydrogen at InP(100) surfaces before and after ion bombardment

Thomas Allinger; V. Persch; Juergen Alois Schaefer; Y. Meng; H. De; J. Anderson; G. J. Lapeyre

doi:10.1117/12.24319

1 March 1991 Interaction of hydrogen at InP(100) surfaces before and after ion bombardment

Thomas Allinger, V. Persch, Juergen Alois Schaefer, Y. Meng, H. De, J. Anderson, G. J. Lapeyre

Proceedings Volume 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization; (1991) https://doi.org/10.1117/12.24319
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

Using high-resolution electron energy-loss spectroscopy (HREELS) in combination with low energy electron diffraction (LEED) and X-ray photoelectron spectroscopy (XPS) we have observed drastic differences in the uptake of atomic hydrogen at clean InP(100). -surfaces before and after ion bombardment. The initial uptake of atomic hydrogen at well-ordered InP(100) 4x2-urfaces occurs in essence by the Insurface atoms this indicates an Inrich surface. With higher exposure to atomic hydrogen an increase in the phosphorous signal relative to that of the indium hydride is observed. Simultaneously the low-energy electron-diffraction (LEED) pattern is changed from a 4x2 structure for the clean surface to 4x1 and finally to lxi. Substrate surface bonds are disrupted and this favours the formation of phosphorous hydrides. XPS shows no significant changes in the P 2p/In 3d intensity ratio in the examined exposure range. In particular isochronal annealing experiments indicate that phosphorous hydrides are more stable than indium hydrides. Furthermore both hydrides are more stable in the advanced than in the initial stages of hydrogen interaction. For the ion-bombarded surface the P-H/In-H intensity ratio increases by a factor of five if compared to the value obtained at the annealed 4x2-surface. This ratio can be increased further by extending the sputtering time. The latter data indicate predominantly broken P-bonds and the formation of Inclusters.

Citation Download Citation

Thomas Allinger, V. Persch, Juergen Alois Schaefer, Y. Meng, H. De, J. Anderson, and G. J. Lapeyre "Interaction of hydrogen at InP(100) surfaces before and after ion bombardment", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24319

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