Molecular beam epitaxy GaAs on Si: material and devices for optical interconnects

Paul Panayotatos; Alexandros Georgakilas; Jean-Loic Mourrain; Aristos Christou

doi:10.1117/12.24348

1 March 1991 Molecular beam epitaxy GaAs on Si: material and devices for optical interconnects

Paul Panayotatos, Alexandros Georgakilas, Jean-Loic Mourrain, Aristos Christou

Proceedings Volume 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization; (1991) https://doi.org/10.1117/12.24348
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

(100)CdZnTe epilayers are grown by hot wall beam epitaxy (HWBE) on (100) GaAs. The CdZnTe epilayers are used as substrates for the growth of Hg1_CdTe (x = 0.27 - 0.32) layers by closed space vapor phase epitaxy. The Hg1CdTe layers have an x-ray rocking curve width of 59 10 arc sec measured across a 1 inch wafer. The layers are p-type with a hole concentration of 2 - 4.1016crri3 and a mobility of 250 - 350cm2/Vs at 77 K. Photoconductivity decay measurements give the lifetime of excess carriers which is governed by recombination via Shockley-Read centres at T < 250 K. Linear arrays of planar, photovoltaic detectors are fabricated by implantation of B ions. The elements size is 50 50,arn2, the space between the elements is 50prn. The R0A product, the responsivity and the cut-off wavelength of the p-n junction are measured at 192 K. The variation of the responsivity across a 16 element array is less than 4 %, the cut-off wavelength varies between 4.77,um and 4.83μm.

Citation Download Citation

Paul Panayotatos, Alexandros Georgakilas, Jean-Loic Mourrain, and Aristos Christou "Molecular beam epitaxy GaAs on Si: material and devices for optical interconnects", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24348

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