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1 March 1991 Molecular beam epitaxy/liquid phase epitaxy hybrid growth for GaAs-LED on Si
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A hybrid growth of GaAs on Si combined molecular beam epitaxy (MBE) with subsequent liquid phase epitaxy (LPE) has been carried out to fabricate light emitting diodes (LED''s) on Si. The formation of the dissolution pits which was a serious problem for this method could be suppressed by making the formation mechanism clear. The optimum hybrid-grown GaAs on Si had better crystallinity than MBE-grown one. It was also suggested that further improvement in the crystallinity of MBEgrown GaAs layers led to higher quality of hybrid-grown ones. LED''s have been fabricated using the optimum hybrid-grown GaAa-on-Si substrates. They had higher potential to achieve high light intensity and stability compared with those fabricated by MBE-grown ones. The better characteristics are attributed to higher crystallinity of the hybrid-grown GaAs on Si.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tetsuroh Minemura, Yuji Yazawa, J. Asano, and T. Unno "Molecular beam epitaxy/liquid phase epitaxy hybrid growth for GaAs-LED on Si", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991);


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