Paper
1 March 1991 Monolithic epitaxial IV-VI compound IR-sensor arrays on Si substrates for the SWIR, MWIR and LWIR range
Hans Zogg, Jiri Masek, Clau Maissen, Taizo J. Hoshino, Stefan Blunier, A. N. Tiwari
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Abstract
Fabrication of infrared sensor arrays in epitaxial lead-salt layers on Si are described with PbS, PbTe and Pb1SnSe for the SWIR, MWIR and LWIR range. Epitaxy of the 2-3 jim thick layers is obtained with the aid of a 200 nm thick stacked CaF2-BaF2 buffer. Linear arrays with 66 elements were fabricated. For the LWIR range, an array with 10.5 jim cut-off wavelength at 77K and spread below 0. 1 im demonstrates the superior homogeneity achievable with IV-VI materials compared to MCT. The mean quantum efficiency of this array is 59% with 3% standard deviation of the individual sensors.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hans Zogg, Jiri Masek, Clau Maissen, Taizo J. Hoshino, Stefan Blunier, and A. N. Tiwari "Monolithic epitaxial IV-VI compound IR-sensor arrays on Si substrates for the SWIR, MWIR and LWIR range", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24344
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KEYWORDS
Silicon

Sensors

Quantum efficiency

Long wavelength infrared

Photovoltaics

Lead

Mid-IR

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