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1 March 1991 Optical properties of short-period Si/Ge superlattices grown on (001) Ge studied with photoreflectance
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Abstract
Si/Ge superlattices provide the possibility to create a novel direct band gap semiconductor. The energies and oscillator strength of interband transitions are strongly affected by strain individual layer thicknesses and superlattice periodicity. We report on photoreflectance (PR) studies of SimGen superattices with a layer thickness ratio m/n1/3 and period lengths of 8 12 and 16 monolayers. Between 1. 9 and 2. 5 eV transitions which are related to the E1 gap are observed for all samples. In the infrared region between 0. 9 and 1. 2 eV superlattice induced interband transitions are observed for Si2Ge6.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ulrich Menczigar, Michael J. Dahmen, Reinhard Zachai, K. Eberl, and Gerhard Abstreiter "Optical properties of short-period Si/Ge superlattices grown on (001) Ge studied with photoreflectance", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24402
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