Raman scattering characterization of direct gap Si/Ge superlattices

Julian Darryn White; Michael A. Gell; Gerhard Fasol; C. J. Gibbings; C. G. Tuppen

doi:10.1117/12.24403

Translator Disclaimer

1 March 1991 Raman scattering characterization of direct gap Si/Ge superlattices

Julian Darryn White, Michael A. Gell, Gerhard Fasol, C. J. Gibbings, C. G. Tuppen

Author Affiliations +

Proceedings Volume 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization; (1991) https://doi.org/10.1117/12.24403
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

STRACT We use Raman scattering to investigate direct gap Si/Ge superlattices for which the Si layers are in the form of biatomic sheets. We find a characteristic signal arising from the presence of the biatomic Si sheets. A range of samples have been investigated and 3-dimensional lattice dynamical calculations have been performed which pinpoint the Si layers as the origin of the signal. We illustrate how the signal may be used to characterise the quality of for example (Si)2/(Ge)6 superlattices grown at various substrate temperatures.

Citation Download Citation

Julian Darryn White, Michael A. Gell, Gerhard Fasol, C. J. Gibbings, and C. G. Tuppen "Raman scattering characterization of direct gap Si/Ge superlattices", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24403

ACCESS THE FULL ARTICLE