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1 March 1991 Study of properties of a-Si1-xGex:H prepared by SAP-CVD method
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Abstract
The Sputtering-Assisted Plasma (SAP)-Chemieal Vapour Deposition (CYD) method was used to prepare in a gas mixture of SIH4 + Ar + H2 a-Sii_Ge : H with different composition and optical gap between 0. 98 and 1. 85 eV. From experimental study of samples optimal processing conditions were obtained and a model of interactions between H and the growing surface was presented. Study of the properties of samples shew that hydrogenated a-Si Ge alloy prepared by SAP-CVD technique is superior in some respects with regard to optoelectronic effect and deterioration of the performance related with in-crease of Ge content.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yi-Ming Wang, Lian-hua Jing, and Da-wen Pang "Study of properties of a-Si1-xGex:H prepared by SAP-CVD method", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24405
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