Tunneling recombination of carriers at type-II interface in GaInAsSb-GaSb heterostructures

A. N. Titkov; Yury P. Yakovlev; Alexej N. Baranov; V. N. Cheban

doi:10.1117/12.24429

1 March 1991 Tunneling recombination of carriers at type-II interface in GaInAsSb-GaSb heterostructures

A. N. Titkov, Yury P. Yakovlev, Alexej N. Baranov, V. N. Cheban

Proceedings Volume 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization; (1991) https://doi.org/10.1117/12.24429
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

We report the first observation of the carriers confinement and recombination in the adjusted quantum wells at the type II interface in GaInSbAs/GaSb heterostructures grown by liquid phase epitaxy. Type II heterostructures in which both the conduction and the valence band edges of one semiconductor are shifted upward relative to those of the other one can exhibit adjacent dual quantum wells for electrons and holes on the two sides of the interface. Tunneling-assisted radiative recombination between the wells offers an efficient, bias-tunable, source of radiation at below-gap energies.

Citation Download Citation

A. N. Titkov, Yury P. Yakovlev, Alexej N. Baranov, and V. N. Cheban "Tunneling recombination of carriers at type-II interface in GaInAsSb-GaSb heterostructures", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24429

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