Paper
1 February 1991 Buried-ridge-stripe lasers monolithically integrated with butt-coupled passive waveguides for OEIC
D. Remiens, V. Hornung, B. Rose, D. Robein
Author Affiliations +
Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24550
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany
Abstract
Monolithic integration between an active and a passive waveguide directly buttjointed in a single step of MOCVD is demonstrated at 1. 5pm. The growth behavior on a patterned InP substrate is studied by using a periodic structure of GaInAs or InGaAsP/InP layers. Buried Ridge Stripe (B. R. S. ) structures consisting of a 25Ojjm long active region and 13OOjm long passive waveguide exhibit 25 mA threshold current 60 coupling coefficient and an optical output power in excess of 5 mW is measured at the passive waveguide. The monolithic integration of a distributed feedback laser coupled to a passive waveguide with this new concept is investigated.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. Remiens, V. Hornung, B. Rose, and D. Robein "Buried-ridge-stripe lasers monolithically integrated with butt-coupled passive waveguides for OEIC", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); https://doi.org/10.1117/12.24550
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KEYWORDS
Waveguides

Optoelectronic devices

Photonic integrated circuits

Photoresist materials

Physics

Scanning electron microscopy

Active optics

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