Paper
1 February 1991 InGaAs/AlGaAs vertical optical modulators and sources on a transparent GaAs substrate
Luc Buydens, Piet M. A. Demeester, Peter M. De Dobbelaere, Peter Van Daele
Author Affiliations +
Proceedings Volume 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications; (1991) https://doi.org/10.1117/12.24532
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany
Abstract
InGaAs/AlGaAs Strained Layer Superlattices (SLS) have been grown using the MOVPE technique. These layers were characterized by X-ray, photoluminescence, photocurrent and transmission measurements. With this material optical modulators and LEDs were made working at a wavelength for which the GaAs substrate is transparent. Reverse biasing the modulator resulted in a large absorption shift in the photocurrent spectra due to the Quantum Confined Stark Effect (QCSE) on the quantum wells. An InGaAs/AlGaAs SLS compared favorably with similar InGaAs/GaAs SLSs. A back-side emitting LED, with an InGaAs SQW as the active layer, gave a maximal output power of about 8 micro-W/mA/Sr.
© (1991) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Luc Buydens, Piet M. A. Demeester, Peter M. De Dobbelaere, and Peter Van Daele "InGaAs/AlGaAs vertical optical modulators and sources on a transparent GaAs substrate", Proc. SPIE 1362, Physical Concepts of Materials for Novel Optoelectronic Device Applications II: Device Physics and Applications, (1 February 1991); https://doi.org/10.1117/12.24532
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KEYWORDS
Laser sintering

Light emitting diodes

Gallium arsenide

Optoelectronic devices

Indium gallium arsenide

Optical modulators

Quantum wells

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